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| PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. H557 APPLICATIONS SWITCHING AND AMPLIFIER ABSOLUTE MAXIMUM RATINGS a=25ae(c) T TO-92 T stg Storage Temperature----------55~150ae T j Junction Temperature------------150ae www..com PCCollector Dissipation------------500mW VCBO Collector-Base Voltage------------50V VCEO Collector-Emitter Voltage-----------45V VE B O Emitter- Base Voltage------------5V IC Collector Current--------------100mA 1D Collector C 2D Base B 3D Emitter E ELECTRICAL CHARACTERISTICS a=25ae(c) T Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Min - 50 - 45 -5 - 15 Typ Max Unit V V V nA Test Conditions Symbol BVCBO BVCEO BVEBO ICBO HFE VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) VBE(ON1) VBE(ON2) IC=-100|I IE=0 A, IC=-10mA, IB=0 IE=-100|I IC=0 A VCB=-30V, IE=0 VCE=-5V, IC=-2mA DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product Output Capacitance 110 - 90 - 250 - 700 - 900 - 660 150 800 - 300 - 650 mV IC=-10mA, IB=-0.5mA mV IC=-100mA, IB=-5mA m V m V IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA - 750 - 800 6 mV VCE=-5V, IC=-2mA mV VCE=-5V, IC=-10mA MHz VCE=-5V,IC=-10mA,f=1MHz pF VCB=-10V, IE=0,f=1MHz fT Cob hFE Classification A 110 220 B 200 450 C 420 800 Shantou Huashan Electronic Devices Co.,Ltd. H557 www..com |
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